(Hong Kong)
Product Summary
The 2N5566 is a Matched N-Channel JFET Pair. This two-chip design reduces parasitics for good performance at high frequency while ensuring extremely tight matching. The 2N5566 features high breakdown voltage (V(BR)DSS typically > 55 V), high gain(typically > 9 mS), and <5 mV offset between the two die. The applications of the 2N5566 include: Wideband Differential Amps, High-Speed, Temp-Compensated, Single-Ended Input Amps, High-Speed Comparators, Impedance Converters, Matched Switches.
Parametrics
2N5566 absolute maximum ratings: (1)Gate-Drain, Gate-Source Voltage: –40 V; (2)Gate-Gate Voltage: ±80 V; (3)Gate Current: 50 mA; (4)Lead Temperature (1/16 from case for 10 sec.): 300 ℃; (5)Storage Temperature: –65 to 200℃; (6)Operating Junction Temperature: –55 to 150℃; (7)Power Dissipation : Per Sidea: 325 mW; Totalb: 650 mW.
Features
2N5566 features: (1)Two-Chip Design; (2)High Slew Rate; (3)Low Offset/Drift Voltage; (4)Low Gate Leakage: 3 pA; (5)Low Noise: 12 nV/√Hz @ 10 Hz; (6)Good CMRR: 76 dB; (7)Minimum Parasitics.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2N5566 |
Vishay/Siliconix |
JFET 40V 5mA |
Data Sheet |
Negotiable |
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2N5566-E3 |
Vishay/Siliconix |
JFET 40V 5mA |
Data Sheet |
Negotiable |
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