(Hong Kong)
Product Summary
The BAW56LT1 is a Monolithic Dual Switching Diode Common Anode.
Parametrics
BAW56LT1 absolute maximum ratings: (1)Reverse Voltage VR: 70 Vdc; (2)Forward Current IF: 200 mAdc; (3)Peak Forward Surge Current IFM(surge): 500 mAdc; (4)Non.Repetitive Peak Forward Current, IFSM: 4 A.
Features
BAW56LT1 features: (1)Total Device Dissipation FR. 5 Board PD: 225mW; Derate above 25℃: 1.8 mW/℃; (2)Thermal Resistance, Junction to Ambient, RθJA: 556 ℃/W; (3)Total Device Dissipation, Alumina Substrate, (Note 2) TA = 25℃: PD 300mW; Derate above 25℃: 2.4 mW/℃; (4)Thermal Resistance, Junction.to.Ambient, RθJA: 417 ℃/W; (5)Junction and Storage Temperature TJ, Tstg: -55 to +150℃.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BAW56LT1 |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) 70V 200mA |
Data Sheet |
Negotiable |
|
||||||||||||
|
BAW56LT1G |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) 70V 200mA |
Data Sheet |
|
|
||||||||||||
