Product Summary

The IXFH26N60Q is a HiPerFET Power MOSFET.

Parametrics

IXFH26N60Q absolute maximum ratings: (1)VDSS: 600 V at TJ = 25℃ to 150℃; (2)VDGR: 600 V at TJ = 25℃ to 150℃; RGS = 1 MΩ; (3)VGS: ±20 V at Continuous; (4)VGSM: ±30 V at Transient; (5)ID25: 26 A at TC = 25℃; (6)IDM: 104 A at TC = 25℃, pulse width limited by TJM; (7)IAR: 26 A at TC = 25℃; (8)EAR: 45 mJ at TC = 25℃; (9)EAS: 1.5 J at TC = 25℃; (10)dv/dt: 5 V/ns at IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150℃, RG = 2 Ω; (11)PD: 360 W at TC = 25℃; (12)TJ: -55 to +150 ℃; (13)TJM: 150 ℃; (14)Tstg: -55 to +150 ℃.

Features

IXFH26N60Q features: (1)Low gate charge; (2)International standard packages; (3)Epoxy meet UL 94 V-0, flammability classification; (4)Low RDS (on) process; (5)Rugged polysilicon gate cell structure; (6)Avalanche energy and current rated; (7)Fast intrinsic Rectifier.

Diagrams

IXFH26N60Q diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IXFH26N60Q
IXFH26N60Q

Ixys

MOSFET 600V 26A

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IXFH 18N60P
IXFH 18N60P

Other


Data Sheet

Negotiable 
IXFH 28N50F
IXFH 28N50F

Other


Data Sheet

Negotiable 
IXFH/IXFM42N20
IXFH/IXFM42N20

Other


Data Sheet

Negotiable 
IXFH100N25P
IXFH100N25P

Ixys

MOSFET 100 Amps 250V 0.027 Rds

Data Sheet

Negotiable 
IXFH102N15T
IXFH102N15T

Ixys

MOSFET 102 Amps 0V

Data Sheet

Negotiable 
IXFH10N100
IXFH10N100

Ixys

MOSFET 1KV 10A

Data Sheet

Negotiable