(Hong Kong)
Product Summary
The MCD56-12I08B is a Thyristor Module.
Parametrics
MCD56-12I08B absolute maximum ratings: (1)ITRMS, IFRMS TVJ = TVJM: 100 A; (2)ITAVM, IFAVM: 64 A; (3)ITSM, IFSM TVJ = 45℃: 1500 A; (4)∫i2dt: 11 200 A2s; (5)(di/dt)cr TVJ = TVJM repetitive, IT = 150 A: 150 A/μs; (6)(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM: 1000 V/μs; (7)PGM TVJ = TVJM; tP = 30 μs: 10 W; (8)PGAV: 0.5 W; (9)VRGM: 10 V; (10)TVJ: -40 to +125 ℃; (11)TVJM: 125 ℃; (12)Tstg: -40 to +125 ℃.
Features
MCD56-12I08B features: (1)International standard package, JEDEC TO-240 AA; (2)Direct copper bonded Al2O3 -ceramic base plate; (3)Planar passivated chips; (4)Isolation voltage 3600 V~; (5)UL registered, E 72873; (6)Gate-cathode twin pins for version 1B.
Diagrams
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 MCD500-12io1 |
Ixys |
Discrete Semiconductor Modules |
Data Sheet |
Negotiable |
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MCD500-14io1 |
Ixys |
Discrete Semiconductor Modules |
Data Sheet |
Negotiable |
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MCD500-16io1 |
Ixys |
Discrete Semiconductor Modules |
Data Sheet |
Negotiable |
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MCD500-18io1 |
Ixys |
Discrete Semiconductor Modules |
Data Sheet |
Negotiable |
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MCD500-20io1 |
Ixys |
Discrete Semiconductor Modules 500 Amps 2000V |
Data Sheet |
Negotiable |
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MCD500-22io1 |
Ixys |
Discrete Semiconductor Modules 500 Amps 2200V |
Data Sheet |
Negotiable |
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