Product Summary

The MHW916 is an UHF silicon FET power amplifier.

Parametrics

MHW916 absolute maximum ratings: (1)DC Supply Voltage VS: 28 Vdc; (2)DC Bias Voltage VB: 16 Vdc; (3)RF Input Power Pin: 19 dBm; (4)RF Output Power Pout: 25 W; (5)Operating Case Temperature Range TC: – 5.0 to +85 ℃; (6)Storage Temperature Range Tstg: – 30 to +100 ℃; (7)Standby Current (Pin Removed, Istdby = IS1 + IS2) Istdby: 400 mA.

Features

MHW916 features: (1)Specified 26 Volt Characteristics; (2)RF Input Power: 15.5 dBm Max; (3)RF Output Power: 16 Watts at 1.0 dB Compression Point; (4)Minimum Gain: 26.5 dB; (5)Harmonics: -35 dBc Max at 2Fo; (6)50 W Input/Output System; (7)Meet GSM Linearity Specification for Base Station up to 12.5 Watts.

Diagrams

MHW916 block diagram

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MHW916
MHW916

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