IRF244

N-Channel enhancement mode, silicon gate power field effect transistor, TO-3, 250 V

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Price:: US $0.80~1.60 / piece [Get Latest Price]

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PartNumber:: IRF244

Brand:: Intersil Corporation - Intersil | Pack: TO | D/C: 11+

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Products Upload time: 2011-12-11

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Product Summary

The IRF244 is a N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. The IRF244 is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Parametrics

IRF244 absolute maximum ratings: (1)Drain to Source Voltage VDS: 250 V; (2)Drain to Gate Voltage (RGS = 20kΩ) VDGR: 250 V; (3)Continuous Drain Current ID: 14 A; (4)Pulsed Drain Current IDM: 56 A; (5)Gate to Source Voltage VGS: ±20 V; (6)Maximum Power Dissipation PD: 125 W; Linear Derating Factor 1.0 W/℃; (7)Single Pulse Avalanche Energy Rating EAS: 550 mJ; (8)Operating and Storage Temperature TJ, TSTG: -55 to 150 ℃; (9)Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s TL: 300℃.

Features

IRF244 features: (1)14A and 13A, 275V and 250V; (2)rDS(ON) = 0.28Ω and 0.34Ω; (3)Single Pulse Avalanche Energy Rated; (4)SOA is Power Dissipation Limited; (5)Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance; (8)275V, 250V DC Rated - 120V AC Line System Operation; (9)Related Literature.